Polycrystalline Silicon Films Prepared by Rapid Thermal Annealing

摘要：

　　The amorphous silicon (a-Si) thin films were deposited by PECVD and then were annealed by RTP.Using the Fourier infrared conversion spectrum scanning, electronic microscope and X-ray-diffraction techniques, the properties of annealed a-Si thin film were analyzed.It was found that the hydrogen of thin films vanished completely when annealed at 600℃ for 60s.The results showed the surface of thin films became smoother with multi-step annealing than one step annealing.The results suggest that the multi-step annealing can improve the surface quality and crystallinity of thin films.

关键词： Rapid thermal processing (RTP) amorphous silicon (a-Si) crystallinity

作者: Weizhong SUN Caichi LIU Qiuyan HAO Huijuan ZHANG Xinjian XIE Zhi QIAO

作者单位: Institute of Information Function Material, Hebei University of Technology Tianjin, 300130, China

会议类型: 国内会议

会议名称: 2010中国可再生能源科技发展大会

会议地点: 北京

会议语种:英文

页码: 74-76

在线出版日期: 2010-12-18（万方平台首次上网日期，不代表论文的发表时间）