Large Batch Etching of Sapphire Wafers to Achieve High Throughput and Low Cost of Ownership

摘要：

　　Formation of cone shaped sapphire features has been studied using the newly developed plasma etcher PlasmaPro 1000 Astrea from Oxford Instruments Plasma Technology.This new etcher uses a large Transformer Coupled Plasma (TCP) source which generates a high ion density.Patterned sapphire etching rate up to120nm/min could be obtained using a BCl3 based chemistry.Control of the process settings has allowed demonstrating cone shape features with height up to 2um,smooth sidewalls and no trenching.Uniform etching within wafer and across batches of 48 x 2” and 14 x 4” substrates has been achieved with etch rates >60nm/min and selectivity >0.7:1.

会议类型: 国内会议

会议名称: 第十一届中国国际半导体照明论坛

会议地点: 宜昌

会议语种:英文

页码: 1-4

在线出版日期: 2014-05-15（万方平台首次上网日期，不代表论文的发表时间）