Wafer-Level light emitting diode (WL-LED): An innovative approach for cost-effective very high power lighting

摘要：

　　A very high power wafer level light emitting diode (WL-LED) has been successfully fabricated on 2 inches InGaN/GaN epi-wafer based on high voltage design.The maximum light output power (LOP) was measured to be 157W with an external quantum efficiency (EQE) of 24%.

会议类型: 国内会议

会议名称: 第十一届中国国际半导体照明论坛

会议地点: 宜昌

会议语种:英文

页码: 1-4

在线出版日期: 2014-05-15（万方平台首次上网日期，不代表论文的发表时间）