Fabrication of microstructures on GaAs with pulsed electrochemical wet stamping

摘要：

　　Fabrication of microstructures on gallium arsenide (GaAs) was investigated using electrochemical wet stamping (E-WETS) by limiting a selective anodic dissolution process in the contact area between a stamp and a GaAs substrate.The pre-patterned agarose stamp acts as a current flow and electrolyte channel between a working electrode and a counter electrode.A short potential pulse was applied to improve the precision as well as surface roughness of the fabricated microstructures on GaAs surfaces.The pulse width of 100 μs and pulse-to-pause ratio of 1:3 were selected as optimum machining parameters.Lateral deviation of the fabricated microstructures from those on the master was approximately 1.3 %, and the electrochemical etch rate in 0.1 M HBr was approximately 40 μm/h.The results demonstrated that E-WETS was a promising approach to fabricate microstructures on GaAs with high accuracy and efficiency.

关键词： Agarose stamp GaAs Electrochemical micromachining Short pulse

作者: Hang Zhou Lei-Jie Lai Yu-Jie Du Li Zhang Li-Min Zhu

作者单位: State Key Laboratory of Mechanical System and Vibration, School of Mechanical Engineering, Shanghai School of Material Science and Engineering, Nanchang Hangkong University, Nanchang 330034 School of Energy & School of Physical Science and Technology, Soochow University, Suzhou 2150062

会议类型: 国内会议

会议名称: 上海交通大学第16期博士生学术论坛——机械百年·智能制造·智造中国学术论坛

会议地点: 上海

会议语种:英文

页码: 48-55

在线出版日期: 2013-11-30（万方平台首次上网日期，不代表论文的发表时间）