Light-emitting Diodes on Si (110) Substrate

摘要：

　　We study the morphologies,material properties,andoptical characteristics of an InGaN/GaN QW lightemittingdiode (LED) structure grown on a <1-10>-oriented one-dimensional trench-patterned Si (110)substrate with other samples of different trenchorientations on Si (110) substrate,flat Si (110) substrate,and Si (111) substrate are demonstrated.By comparingthe performances of the fabricated LEDs based on thethree samples of continuous top surfaces,it is found thatthe sample of <1-10>-oriented trench has the strongestoutput power,lowest device resistance,and smallestspectral shift range in increasing injection current.

作者: Chih-Yen Chen Chieh Hsieh Wen-Ming Chang Yean-Woei Kiang C.C.Yang Horng-Shyang Chen Zhan Hui Liu Chun-Han Lin Chia-Ying Su Ta-Wei Chang Pei-Ying Shih Chung-Hui Chen Wang-Hsien Chou

作者单位: Institute of Photonics and Optoelectronics,National Taiwan University,1,Roosevelt Road,Section 4,Taipei,10617 Taiwan

会议类型: 国内会议

会议名称: 第十届中国国际半导体照明论坛

会议地点: 北京

会议语种:英文

页码: 2-3

在线出版日期: 2013-11-10（万方平台首次上网日期，不代表论文的发表时间）