In-situ Monitoring of MOCVD of LEDs on Dry Etched Patterned Sapphire Substrates in a Close Coupled Showerhead Reactor

摘要：

　　during the growth of GaN based light emitting diodes (LED) on dry etched patterned sapphire substrates (DPSS) in a CRIUS? II-XL Close Coupled Showerhead? (CCS?) MOVPE reactor with a 19x4” wafer configuration.Reflectivity and curvature measurements give an insight into the growth of the buffer layer.Reflectivity measurements give insight into the morphological development during the buffer with features correlated to curvature and final device structure quality,and the curvature measurements give a direct reading of the curvature.Both correlate to material properties such as XRD full width half maximum (FWHM).The morphology of the DPSS and subsequent growth creates a challenge for surface temperature measurements,required for Topside Temperature Control.Approaches to overcome these issues will be discussed.

作者: A.R. Boyd O. Feron X Chen M. Luenenbuerger B. Schineller M. Heuken

作者单位: AIXTRON SE Kaiserstrasse 98,52134 Herzogenrath,Germany

会议类型: 国内会议

会议名称: 第十届中国国际半导体照明论坛

会议地点: 北京

会议语种:英文

页码: 16-17

在线出版日期: 2013-11-10（万方平台首次上网日期，不代表论文的发表时间）