Key Technology Development and Future Prospect for High-Voltage Light-Emitting Diodes

摘要：

　　In this work,we have investigated various characteristics of the isolation trenches,such as surface roughness of sidewall,etching depth,inclined angle and distribution pattern,and their effects on the performance of HV LEDs.Through optimizing these physical properties of isolation trenches,18V HV-LED chips (20*45mil) with excellent performance has been fabricated.Then the optoelectronic properties of HVLEDs chips obtained are characterized.Lastly,the prospects for the fabrication technology and application of HV-LEDs in the future are discussed.

作者: Sufen Cheng Jin Xu Jiangbo Wang Rong Liu

作者单位: HC SemiTek Corporation,8 Binhu Road,East Lake Hi-tech Development Zone,Wuhan 430223,P.R.China

会议类型: 国内会议

会议名称: 第十届中国国际半导体照明论坛

会议地点: 北京

会议语种:英文

页码: 75-78

在线出版日期: 2013-11-10（万方平台首次上网日期，不代表论文的发表时间）