Enhancement of the Light Extraction Efficiency of Flip-chip Light-emitting Diodes fabricated on patterned Silicon Carbide and Sapphire Substrates

摘要：

　　Total internal reflection (TIR) effect leads to low light extraction efficiency (LEE) of the GaN LEDs on SiC and sapphire substrates.The LEE enhancements of the GaN based flip-chip light-emitting diodes (FC-LEDs) on patterned substrates are investigated by experiments and simulations.The optical output power of the FC-LEDs on patterned SiC substrate increases by 8.15% while the optical output power of the FC-LEDs on patterned sapphire substrate improves 48% from the experimental results.According to the simulation data,the LEE enhancements of the FC-LEDs on patterned SiC and sapphire substrates cause the improvements of the light output power.

作者: Mingsheng Xu Huayong Xu Yan Shen Shuang Qu Chengxin Wang Xiaobo Hu Xiangang Xu

作者单位: State Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,P.R.China Shandong Inspur Huaguang Optoelectronics Co.,Ltd,Jinan 250100,P.R.China State Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,P.R.China;Shandong Inspur

会议类型: 国内会议

会议名称: 第十届中国国际半导体照明论坛

会议地点: 北京

会议语种:英文

页码: 118-121

在线出版日期: 2013-11-10（万方平台首次上网日期，不代表论文的发表时间）