Novel Reverse Conducting Insulated Gate Bipolar Transistor with Anti-parallel MOS Controlled Thyristor
Novel reverse-conducting IGBT (RC-IGBT) with anti-parallel MOS controlled thyristor (MCT) is proposed.Its major feature is the introduction of an automatically controlled MCT at the anode, by which the anode-short effect is eliminated and the voltage snapback problem is solved.Furthermore, the snapback-free characteristics can be realized in novel RC-IGBT by a single cell with a width of 10 μ, rn with more uniform current distribution.As numerical simulations show, compared with the conventional RC-IGBT, the forward conduction voltage is 35% reduced while the reverse conduction voltage is reduced by 50% at the J =150 A/cm2.
Reverse conducting IGBT snapback free turn-off energy reverse-recovery charge
Liheng Zhu Xingbi Chen
State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China,Chengdu,China
国内会议
成都
英文
175-181
2013-11-15（万方平台首次上网日期，不代表论文的发表时间）