Impact of microstructures on the Metal-Insulator transition in epitaxial VO2 thin films
Epitaxial vanadium dioxide thin films with different thicknesses were deposited on Al2O3 (0001) substrates by using a polymer-assisted deposition technique.The metal-insulator transition of the films was investigated by the temperature dependency of Raman spectrum and Fourier transform infrared spectroscopy.It is interesting to observe that the occurrence window of the intermediate monoclinic phase (M2) is related to the thickness of the film.By carefully studying the microstructures of the as-prepared thin films by high resolution X-ray diffraction, it is suggested that this is associated with the nucleation of the new phase at the domain boundaries, which is strongly affected by the epitaxial quality.
Vanadium dioxide M2 phase HRXRD Metal-insulator Transition
Yanda Ji Yin Zhang Min Gao Zhen Yuan Yudong Xia Changqing Jin Bowan Tao Yuan Lin
State Key Laboratory of Electronic Thin films and Integrated Devices,University of Electronic Scienc The Institute of Physics,Chinese Academy of Sciences,P.O.Box 603,Beijing 100190,P.R.China
国内会议
成都
英文
232-238
2013-11-15（万方平台首次上网日期，不代表论文的发表时间）