Study on the Formation of Dodecagonal Pyramid on N-polar GaNSurface by HCl Etching
Hydrochloric acid(HCl) etching was applied to N-polar GaN surface prepared by nature cleaving of bulk GaN crystal.It was found that N-polar surface was featured with the dodecagonal pyramids,constituted of one set of facets ”21-3-3”.The surface were studied by scanning electron microscope(SEM) and cathodoluminescence(CL).Transmission electron microscopy(TEM) measurement indicates that the formation of pyramids is not correlative to the threading dislocation.Thermodynamics and kinetics for the dodecagonal pyramid formation are discussed.
Bulk GaN N-polar surface Etching TEM
苏旭军 徐俞 张敏 曾雄辉 牛牧童 任国强 王建峰 张锦平 徐科
国内会议
烟台
英文
120-124
2012-08-01（万方平台首次上网日期，不代表论文的发表时间）