Luminescence mechanism in green InGaN/GaN LED with an insertion layer between the multiple quantum wells and n-GaN layer

摘要：

　　The green light emitting diode (LED) with an insertion layer between the multiple quantum wells and n-GaN layer was grown on c-plane sapphire substrate by metal organic chemical vapor deposition.We investigated the structural and optical properties of the LEDs with and without insertion layer.It was found the insertion layer could promote the combination of In concentration,and induced an overall red-shift of wavelength.We speculate that the In phase separation and piezoelectric field would be responsible for the wavelength red-shift,the performance of LED deteriorated either.

关键词： LED phase separation insertion layer

作者: Shiwei Song Yang Liu Hongwei Liang Xiaochuan Xia Kexiong Zhang Dechao Yang Guotong Du

作者单位: School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, J School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024;Stat

会议类型: 国内会议

会议名称: 第十七届全国化合物半导体材料微波器件和光电器件学术会议

会议地点: 开封

会议语种:英文

页码: 61-64

在线出版日期: 2012-11-07（万方平台首次上网日期，不代表论文的发表时间）