Power GaN HEMT on Si Substrate with Al-Content Step-Graded AlGaN Transition Layers
A 1.9-μm-thick GaN high electron mobility transistors (HEMT) structure has been grown on 3-inch Si (111) substrate by metalorganic chemical vapor deposition.By using an AIN buffer layer and two AI-content step-graded AIGaN transition layers and optimizing the growth conditions,the GaN HEMT structure shown excellent electrical properties with flat film surface and good GaN crystalline quality.A sheet resistance of 328 Ω/□□ and sheet electron density of 1155 × 1013 cm-2,resulting in an electron mobility of 1650 cm2/Vs,was measured on the GaN HEMT structure.Power GaN HEMTs were successful fabricated on this structure.A maximum drain-gate breakdown voltage BVGmax of 320 V and a maximum drain current IDSmax of 2.2 A were obtained.
GaN Si substrate HEMT Power electronic device Transition Layers
Jinyu Ni Cen Kong Jianjun Zhou Xun Dong Zhonghui Li Tangsheng Chen
Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing,210016, China
国内会议
开封
英文
137-140
2012-11-07（万方平台首次上网日期，不代表论文的发表时间）