Optical and electrical simulations of two-junction Ⅲ-Ⅴ nanowire on Si solar cell
In this paper,we present an approach to design and analysis of a two-junction III-V GalnP nanowire array(NWA)/Si thin film solar cell based on a combined optical and electrical stimulation method.Using 3D finite-difference time-domain method,we theoretically investigate arrays of NWA to determine the optimal geometry for the trade-offbetween NWA and Si film light absorption.Further,to analyze the optical absorption and reflection of the two-junction cell,it”s found that NWA not only have super absorption characteristic due to light trapping effect,but also act as an efficient anti-reflection coatings for bottom Si cell.To explore the J-V characteristics of the proposed optimal geometry the cell obtained by optical section,the optical generation profiles under AM 1.5G illumination are incorporated into electrical model.Taking into account the NWA surface recombination and Shockly-Reed-Hall (SRH) having a great influence on the external quantum efficiency (EQE),we find that the core-shell NWA and Si thin film structure can easily obtained electrical current matching with the optimal geometry.This model indicated that well passivated NWA with surface recombination velocity of 7× 104(mn),s-2 could also exhibit 27.06%efficiency.
NWA two-junction solar cell EQE simulation
Shaojiang Bu Xinhua Li Long Wen
Key Laboratory of Material Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China
国内会议
开封
英文
262-267
2012-11-07（万方平台首次上网日期，不代表论文的发表时间）