Compound Semiconductor materials, Microwave Devices and Optoelectronic Devices

摘要：

　　This is an abstract which should not be less than 250 words.The scope of the ennference will cover Material Growth and Characterization (lll-Nitride,ZnO,GaAs and InP related,GeSi,Nano materials and so on),Electron Devices (High frequncy,high power),Optcelectronic Devices,and equipment,System and Applications.Please submit A4 size 4-page paper with both Word and PDF format to the email box of conference organization committee.

关键词： compound semiconductor material GaN GaAs ZnO

作者: Xiaofeng Lei Xiaosi Lin Xiaogong Bao

作者单位: School of Physics and electronics, Henan University, Kaifeng, 475004, China

会议类型: 国内会议

会议名称: 第十七届全国化合物半导体材料微波器件和光电器件学术会议

会议地点: 开封

会议语种:英文

页码: 402-406

在线出版日期: 2012-11-07（万方平台首次上网日期，不代表论文的发表时间）