10 × 100 mm 4H-SiC Epitaxial Growth by Warm-Wall Planetary Reactor for the Fabrication of Unipolar Power Devices
Wide-band gap 4H-SiC has been attracted much attention for high-power and high-temperature electronic devices due to its excellent electrical and thermal properties.This paper presents 4H-SiC CVD epitaxy for the fabrication of unipolar power devices in a 10 × 100 mm warm-wall (WW) planetary vapor-phase epitaxial reactor with gas foil rotation.Highly uniform epilayers with intra-wafer uniformity of < 1.5% for thickness and <6.0% for doping has been obtained.The wafer-to-wafer uniformity within a run is 0.52% for thickness and 3.43% for doping,respectively.N-type background doping density is less than 5.05× 1014 cm-3.The optimized surface RMS roughness is around 0.2 nm.It is suggested that this 10 × 100 mm warm-wall planetary reactor provides a promising prospect on the mass production of 4H-SiC epilayers to further promote the development of SiC-based unipolar power electronic devices.
4H-SiC epitaxial growth planetary reactor warm-wall multi-wafer
Guosheng Sun Lin Dong Jun Yu Guoguo Yan Xinhe Zhang Xiguang Li Zhanguo Wang
Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese Academy of S Dongguan Tianyu Semiconductor, Inc., Dongguan 523000, China
国内会议
开封
英文
466-469
2012-11-07（万方平台首次上网日期，不代表论文的发表时间）