Growth of 3C-SiC Films in a Novel Warm-wall Multi-wafer LPCVD Reactor
Multi-wafer heteroepitaxial growth of 3C-SiC layers on Si(lll) substrates were performed by employing a novel home-made warm-wall low pressure chemical vapor deposition (WLPCVD) system with a rotating susceptor which was designed to support up to six 50 mm-diameter wafers.A set of experiments were done with the temperature fixed at 900°C with the C/Si ratio of ranging from I to 6.When the C/Si ratio was 3,3C-SiC wafers with smooth surface can be obtained.Atomic force microscopy (AFM) scans indicated an atomically smooth surface with a roughness (RMS) of 5.74 nm (5x5μm2).Also,to study the uniformity of the multi-wafer system,we dealt with the data of thickness obtained with ellipsometry.It was shown that when we get each wafer rotated,we would obtain 3C-SiC epilayers with good thickness uniformity.
3C-SiC Multi-wafer Heteroepitaxial growth WLPCVD Uniformity
Guoguo Yan Zhanguo Wang Guosheng Sun Xinfang Liu Feng Zhang Lin Dong Liu Zheng Wanshun Zhao Lei Wang Xiguang Li
Novel Semiconductor Material Laboratory, Institute of Semiconductors, Chinese Academy of Sciences Be Novel Semiconductor Material Laboratory, Institute of Semiconductors, Chinese Academy of Sciences Be Tianyu Semiconductor Technology Co., Ltd, Dongguan, 523808, China
国内会议
开封
英文
519-522
2012-11-07（万方平台首次上网日期，不代表论文的发表时间）