Post-CMOS Integration of AIN based Film Bulk Acoustic Wave Resonator for System on Chip Microwave Circuits
In this paper,a CMOS compatible integration strategy for film bulk acoustic wave resonator (FBAR) post-CMOS integration is proposed.By choosing amorphous silicon deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) method as the sacrificial layer and low temperature isotropic plasma dry etching as the releasing process,we could manufacture the FBAR device directly on the passivation layer of the CMOS integrated circuits (CMOS IC) chips.Compared with the reported strategies,this strategy features simple fabrication process and low thermal budget which ensures a minor influence on the fabricated CMOS IC.The manufactured FBAR exhibils well performed resonant characteristics at 2.4GHz.The co-design of the FBAR and the oscillator based on UMC 0.18tm CMOS process and the simulation results has been demonstrated.
AIN film bulk acoustic wave resonator SoC CMOS integration
Changjian Zhou Hualin Cai Yi Yang Yi Shu Pinggang Peng He Tian Yihan Zhang Tianling Ren
Institute of Microelectronics,Tsinghua University, Beijing, 100084, China National Laboratory for Information and Science Technology, Tsinghua University, Belting, China
国内会议
开封
英文
644-647
2012-11-07（万方平台首次上网日期，不代表论文的发表时间）