The Effect of Temperature on Preparing Polycrystalline Silicon Thin Films

摘要：

　　In order to prepare polycrystalline silicon thin films,the effect of temperature on preparing polycrystalline silicon thin films were studied.The a-Si:H thin films were deposited by PECVD and then were annealed by RTA.The microstructure of thin films was investigated by XRD and Raman.The effect of temperature was studied.The result shown that,a-Si:H thin films deposited at 300℃ were easier to be crystallized than those deposited at 100℃,the higher annealing temperature was and the smaller the cooling velocity rates was,the more the nuclei formed.

关键词： polycrystalline silicon thin film PECVD rapid thermal annealing (RTA) nucleus

作者: Hongjuan WANG Yiding HUANG

作者单位: Physics﹠Electronic engineering college of Nan yang normal university Henan Nan yang 473061

会议类型: 国内会议

会议名称: 第四届中国能源科学家论坛

会议地点: 北京

会议语种:英文

页码: 143-146

在线出版日期: 2012-11-01（万方平台首次上网日期，不代表论文的发表时间）