Experiment on lapping 6H-SiC crystal substrate (0001) Si surfacebased on diamondparticle

摘要：

The SiC crystal substrate has been widely used in the area of microelectronics, photonics and new materials, suchas semiconductor lighting, integrated circuits, and so on. In this paper, the influences of the lapping parameters, such as therotational velocity of the lapping platen and the carrier and the polishing pressure on the material removal rate (MRR) andsurface roughness Ra of SiC crystal substrate (0001) Si face based on the diamond particle in lapping. This study results willprovide the reference for developing the abrasive paste, optimizing the process parameters and researching the materialremoval mechanism in lapping of SiC crystal substrate.

关键词： SiC monocrystal substrate Lapping Material removal rate Surface roughness

作者: SU Jianxiu LIU Xinglong LIU Zhixiang ZHANG Zhuqing

作者单位: Henan Institute of Science and Technology, Xinxiang 453003, P. R.China Henan University of Technology, Zhengzhou 450001, P. R. China Henan Polytechnic University, Jiaozuo 454000, P. R. China

会议类型: 国内会议

会议名称: 2012年中国(国际)光整加工技术及表面工程学术会议

会议地点: 无锡

会议语种:英文

页码: 44-49

在线出版日期: 2012-10-19（万方平台首次上网日期，不代表论文的发表时间）