Study of cluster magnetorheological-chemical mechanicalpolishing technology for the atomic scale ultra-smooth surfaceplanarization of SiC
(0) The growth of epitaxial layer of SiC wafer requires the surface of SiC substrate to reach an atomic scale accuracy.To solve the problems of low machining efficiency and low surface accuracy in the polishing process of SiC wafer, a novelultra-precision machining method based on the synergistic effect of chemical reaction and flexible mechanical removal ofthe magnetorheological (MR) effect, the MR-chemical mechanical polishing (MRCMP) is proposed. In this technique,magnetic particles, abrasives and chemical additives are used as MR-chemical polishing fluid to form a cluster MR-effectflexible polishing platen under an applied magnetic field, and it is expected to realize an atomic scale ultra-smooth surfaceplanarization with good controllability and high material removal rate by using the flexible polishing platen. Polishingexperimental results of C surface of 6H-SiC crystal substrate indicate that an atomic scale zero-defect surface can beobtained. The surface roughness of C surface of SiC wafer decreased from 50.86nm to 0.42nm and the material removal ratewas 98nm/min when SiC wafer was polished for 60 minutes.
SiC wafer Magnetorheological finishing Chemical mechanical polishing Compound machining Atomic scalesmooth surface
ZHU Jiangting LU Jiabin PAN Jisheng YAN Qiusheng XU Xipeng
Faculty of Electromechanical Engineering, Guangdong University of Technology, Guangzhou 510006 Engineering Research Center for Brittle Materials Machining;Huaqiao University, Xiamen 361021
国内会议
无锡
英文
94-101
2012-10-19（万方平台首次上网日期，不代表论文的发表时间）