Zinc Oxide Thin Film Transistors Fabricated by R.F. Magnetron Sputtering Using a Compact Powder Target
A lot of work has focused on the development of zinc oxide thin film for the active layer for thin film transistors in recent years. In present article, the active layers for zinc oxide thin film transistors were first time prepared by r.f. Magnetron sputtering using a simply compacted 3-inch-diameter zinc oxide powder target, and the deposition parameters including O2/(Ar+O2) ratio, gas pressure and r.f. Power were carefully optimized. Thousands of zinc oxide thin film transistors with staggered-type or inverse staggered-type stack and various W/L ratios were fabricated and electrically characterized. A better result we achieved with normally-off TFT characteristics presents a saturated mobility of 25.7 cm2/Vs, a threshold voltage of 6.3 V, an on/off current ratio over 7.7×104 an off current less than 7.9×10-10 and a subthreshold slope of 1.2 V/dec. The TFT characteristics results can compete with those for the TFTs manufactured from high-temperature sintered ceramic target reported in literature thus far.
ZnO thin film transistor powder target r.f.magnetron sputtering electrical characterization deposition parameters optimization
Mingtong Lin Wenqing Zhu
The Joint Laboratory of Flat Panel Display Engineering of Shanghai University and SVA Electron Co.Lt Key Laboratory for Advanced Displays and System Applications of Ministry of Education, Shanghai Univ
国内会议
深圳
英文
333-336
2012-05-10（万方平台首次上网日期，不代表论文的发表时间）