Advanced PECVD for High Performance TFT Qunhua Wang, Young Jin Choi, Beom Soo Park, Dong Kil Yim, Lai Zhao, Yi Cui, Gaku Furuta, Soo Young Choi, Robin Tiner, SnhaO Anwar, Shinfchi Knrita, John White

摘要：

Displays in mobile phones, tablets and TVs are moving into higher mobility TFT for better performance. LTPS (low-temperature poly-silicon) TFT and metal oxide TFT are the two major directions for high-performance TFT. AKT developed advanced PECVD technology for both LTPS and metal oxide TFT. Plasma density, gas distribution across the entire large-area substrate have been inproved with inovative technologies. These enabled ~5％ film thickness uniformity and excellent film property uniformity. These technologies also allow for higher deposition rate films and high gas utilization. For metal oxide TFT, film performance was also verified through AKT lab TFT integration test.

关键词： PECVD LTPS OLED a-Si precursor gate insulator ILD amorphous silicon silicon oxide silicon nitride TEOS oxide metal oxide IGZO

作者: Qunhua Wang SnhaO Anwar Shinfchi Kurita John White Young Jin Choi Beom Soo Park Dong Kil Yim Lai Zhao Yi Cui Gaku Furuta Soo Young Choi Robin Tiner

作者单位: AKT Display CVD, Applied Materials 3101 Scott Boulevard, M/S 9106 PO Box 58039 Santa Clara, CA 95054, USA

会议类型: 国内会议

会议名称: 2012中国平板显示学术会议

会议地点: 深圳

会议语种:英文

页码: 366-369

在线出版日期: 2012-05-10（万方平台首次上网日期，不代表论文的发表时间）