AgOx作为空穴缓冲层对OLED性能提高的研究
The interface between the organic layer and the ITO layer in organic 1iglt-emitting diode (OLED) iscrucial to device performance. We used the semiconductor silver oxide to modify TTO anode in polymerlight-emitting diodes(PLED)，and the device efficiency was increased, which was attributed to the balamceableinjection of hole and electron by suppressing the hole injection. Meanwhile, the morphology of the AgOx cm the ITO surface was investigated by atomic force microscopy (AFM).
有机发光二极管 银氧化物 阳极改性 空穴缓冲层 频谱特性 色纯度
刘佰全 邹建华 徐苗 陶洪 王磊 彭俊彪
华南理工大学材料科学与工程学院高分子光电材料与器件研究所发光物理与化学国家重点实验室 广州 510640
国内会议
深圳
中文
382-387
2012-05-10（万方平台首次上网日期，不代表论文的发表时间）