Raman scattering on the Polytype Transformation of SiC Bulk Wafer

摘要：

SiC because of its excellent properties，is very attractive in high power,highfrequency，and high temperature electronic and optoelectronic device applications.In this chapter，Two typical wafer samples were prepared by Physical VaporeDeposition (PVD), with different Nitrogen (N) doping levels choosed.

作者: J.Chen S.C.Lien Y.C.Shin Z .C.Feng C.C.Liu Qiang Xu zhengyun Wu

作者单位: Physics Department, National University of SingaporeSingapore117542 GraduateInstitute of Photonics & Optoelectronics，and Department of Electrical Engineering，National T Graduate Institute of Photonics & Optoelectronics，and Department of Electrical Engineering，National Graduate Institute of Photonics & Optoelectronics，and Department of Electrical Engineering，National Institute of electronics and Department of Electrical Engineering，National Taiwan University, Taipei Department of Physics, University, Xiamen, China, 361005

会议类型: 国内会议

会议名称: 第十六届全国光散射学术会议

会议地点: 厦门

会议语种:英文

页码: 134

在线出版日期: 2011-11-25（万方平台首次上网日期，不代表论文的发表时间）