Recent Development of Power Semiconductor Module
The power electronics technology is important in the wide field with saving energy technology to the generation part from the consumption part. This paper introduces the trend of semiconductor device such applied power electronics equipments of the latest development of technology of IGBT and the next generation semiconductor device such as SiC device. As for IGBT，the 6th generation IGBT，the high-speed IGBT and the High power IGBT module are introduced. As for the SiC device，the combination module of SiC-SBD and IGBT is introduced.
半导体装置 IGBT模块 电子技术 SiC设备
Seiki Igarashi Osamu Ikawa Yasukazu Seki
Fuji Electric Device Technology Co., Ltd.
国内会议
北京
英文
1-7
2009-04-18（万方平台首次上网日期，不代表论文的发表时间）