Highly Uniform Cu Film Deposition by Electrochemical Methods

摘要：

Cu metallization by electrochemical deposition has been implemented in ULSI circuit fabrication for forming interconnects since 1998 . As wafer size increases from 8- to 12-inch，and the Cu seed layer decreases in thickness for every technology node，ohmic resistance of Cu seed layer increases significantly，leading to severe non-uniform deposition of copper film due to a phenomenon called ”terminal effect” . A deposited Cu film that has within-film non-uniformity (WFNU，defined as the thickness standard deviation divided by the thickness mean) exceeding 2.5％ fails to meet the requirement for subsequent CMP process . In this report，impact on WFNU from chamber geometryfactors and process parameters was quantitatively evaluated by simulating the growth process of Cu film. WFNU less than 1.0％ was achieved for 3000A Cu film deposited on 350A Cu seed through optimization of chamber design and the deposition process.

关键词： 铜金属 电化学沉积 超大规模集成电路

作者: Xi Wang Chuan He Yue Ma

作者单位: ACM Research(Shanghai)，Inc．Pudong Cai Lun Road＃1 690，Building 4，Shanghai，201203P.R.China ACM Research(Shanghai)，Inc.Pudong Cai Lun Road＃1 690，Building 4，Shanghai，201203 P.R.China

会议类型: 国内会议

会议名称: 2008”北京微电子国际研讨会暨中国半导体行业协会集成电路设计分会年会

会议地点: 北京

会议语种:英文

页码: 351-355

在线出版日期: 2008-10-28（万方平台首次上网日期，不代表论文的发表时间）