Cu/Barrier CMP Protection Film Characterization Using Electrochemical Technique
Metal CMP，especially Cu/barrier CMP is widely used during semiconductor manufacturing process．To reach both proper removal rate and good dishing and erosion，one of the key steps is the protection film formation．Further more，the protection film nature also affects the system’s capability to control corrosion and other surface related defects． In this paper,variable electrochemical techniques were used to characterize the protection film for different slurry systems．Cu corrosion protection behavior，dishing，removal rates were used to correlate with electrochemical data in the slurry system．The fundamentals of protection film were discussed．Electrochemical techniques were proven to be a promising method to help slurry design and provide a guideline to optimize CMP performance.
铜 屏障保护膜 表征 腐蚀 半导体
Sunny Xu Shumin Wang
Anji Microelectronics(Shanghai)Co．，Ltd．，Suite 613，Building 5，No．3000 Longdong Ave 201203，China; Emai Anji Microelectronics(Shanghai)Co．，Ltd．，Suite 613，Building 5，No．3000 Longdong Ave 201203，China
国内会议
2008”北京微电子国际研讨会暨中国半导体行业协会集成电路设计分会年会
北京
英文
345-350
2008-10-28（万方平台首次上网日期，不代表论文的发表时间）