Characterization of a udHF and gas-phase ozone cleaning chemistry for flash tunnel ozide growth

摘要：

The pre-clean prior to tunnel oxidation is a key unit process for flash memory performance and reliability．This paper studies pre-clean quality by looking at the tunnel oxidation film quality.We compare tunnel oxides grown after a single wafer udHF and gas-phase ozone cleaning technology to a conventional RCA batch cleaning.The ozonated process shows improvements in thetunnel oxide resistivity，density of interface traps，and the total oxide charge.The electrical oxidethickness of the oxide increases even though theoptical thickness is not significantly different.The pre-clean improves the intrinsic breakdown voltage of the tunnel oxide while preserving the tunneling field.When applied to product wafers，the process demonstrates superior in-line defect densities after floating gate deposition.

关键词： 表征 udHF 气相臭氧清洗技术 电压隧道 氧化物

作者: D Chapek C Ridge M Kulzer

作者单位: Semitool，lnc Kalispell，Montana，USA

会议类型: 国内会议

会议名称: 2008”北京微电子国际研讨会暨中国半导体行业协会集成电路设计分会年会

会议地点: 北京

会议语种:英文

页码: 332-335

在线出版日期: 2008-10-28（万方平台首次上网日期，不代表论文的发表时间）