Calculation of phase diagrams of epitaxial in AlxIn1-xAs/InP,AsxSb1-xAl/InP and AlxIn1-xSb/Insb films
The models of phase diagram calculation of semiconductor thin films with different substrates were proposed by considering the contributions of strain energy，self energy of misfit dislocations and surface energy to Gibbs free energy．Phase diagrams of epitaxial in AlxIn1-xAs/InP，AsxSb1-xAl/InP and AlxIn1-xSb/InSb films at various thicknesses were calculated．The calculated results indicate that the region of zinc-blende type phase and compositional latching areas are extended as thickness of the layer decreases，and the effect of the liquid and solid surface energy on the phase diagram appears little．
计算相图 半导体薄膜 闪锌矿
Y.Lu C.P.Wang X.J.Liu
Department of Materials Science and Engineering,College of Materials,and Research Center of Materials Design and Applications,Xiamen University,Xiamen,P.R.China,361005
国内会议
长沙
英文
99-102
2008-11-01（万方平台首次上网日期，不代表论文的发表时间）