Investigation of Second Impact Ionization Induced Degradation in 0.18μm Channel Length NMOSFETS

摘要：

In this paper,secondary impact ionization(2II)induced degradation in 0.18μm channel length NMOSFETS is investigated by using gated diode technique.It is found that the interface trap generation is the dominant mechanism for hot carder degradation in advanced deep sub-micron NMOSFETS upon 2II stress.As a result，the interface traps induced the inversion layer mobility reduction is responsible for the electric parameter degradation in deep sub-micron NMOSFETS during 2II stress。

关键词： Investigation Ionization Induced Degradation NMOSFETS

作者: Wang Qingxue Andrew.Yap

作者单位: Shanghai Institute of Micro-system and Information Technology,Shanghai,200050;Shanghai Grace Semicon Shanghai Grace Semiconductor Manufacturing Corporation,Shanghai,201203,China

会议类型: 国内会议

会议名称: 中国电子学会第十三届青年学术年会

会议地点: 无锡

会议语种:英文

页码: 37-40

在线出版日期: 2007-10-01（万方平台首次上网日期，不代表论文的发表时间）