Total Ionizing Dose Enhanced Reverse Short Channel Effect(RSCE)in the 130-nm PDSOI Core nMOSFETs
An anomalous total dose effect is observed in long-length devices fabricated in a 130 nm partially-depleted silicon-on-insulator(SOI)technology.The previous radiation-induced short channel effect manifests itself with obvious threshold voltage shift after the transistors have suffered from total dose radiation in bulk technology.Nevertheless,the long channel device shows a larger threshold voltage shift and a significant off-state leakage current.Body doping concentration is an important factor affecting the total dose effect of devices.Devices with low body doping concentration show enhanced total-ionizing-dose(TID)susceptibility.Reverse short Channel Effect(RSCE)is enhanced in the 130-nm PDSOI Core nMOSFETs due to the halo or pocket implants introduced in processes,which result in non-uniform channel doping profiles along the device length.
partially-depleted (SOI) total-ionizing-dose (TID) Reverse short Channel Effect(RSCE) oxide trapped charge
Zhang Mengying Hu Zhiyuan Ning Bingxu Dai Lihua Liu Xiaonian Song Lei Zhang Zhengxuan
The State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem a The State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem a
国内会议
兰州
英文
1-11
2016-07-19（万方平台首次上网日期，不代表论文的发表时间）