Research on radiation-induced threshold voltage shifts in power VDMOS based on Charge-pumping method
Total ionization dose experiment was carried out using Co-60 Gamma-irradiation source and radiation-induced threshold voltage shifts in power VDMOS were measured.Interface-trapped minority carriers which generating recombination current was measured based on charge pumping method,and contribution of both radiation-induced interface and oxide traps to threshold voltage shift were separated.An optimal value was obtained by comparing influence of pulse base level、peak to peak amplitude on charge pumping current Icp and then applied to extraction of radiation-induced interface-trap density.It was found that interface-trap density increased from 3.9 × 109cm-2 to 2.5 × 1011cm-2 after irradiation and the threshold voltage shift is less than 1V.
charge pumping VDMOS interface charge threshold voltage
Ding Yan Wang Li-Xin Song Li-Mei Zhang Yan-Fei Sun Bo-Tao Xiao-Chao
Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
国内会议
兰州
英文
1-7
2016-07-19（万方平台首次上网日期，不代表论文的发表时间）