Gallium Nitride Microrods Grown on Graphene/SiO2 Substrate

摘要：

　　We demonstrate that high-density and large-size GaN microrods on multilayer graphene/SiO2 without buffer layer grown by hydride vapor phase epitaxy(HVPE).The GaN microrods were hexagonal with diameter up to 50 μm and the height above 30 μm.The multilayer graphene with defects,which was the key factor assisting nucleation of high-density GaN microrods,was synthesized directly on thermally oxidized SiO2/Si substrate by solid carbon source deposition method at relatively low temperature about 500 oC.The growth mechanism of GaN microrods on graphene/SiO2 substrate was analyzed by transmission electron microscopy(TEM),demonstrating that GaN initial polycrystalline nucleation was followed by oriented epitaxial lateral overgrowth.

作者: En ZHAO Lin QI Yu XU Zong-yao LI Song YANG Bing CAO Ji-cai ZHANG Jian-feng WANG Chin-hua WANG Ke XU

作者单位: Soochow University,Lane 333,Ganjiang Road,Gusu District,Suzhou,China

会议类型: 国际会议

会议名称: The 2017 2nd International Seminar on Applied Physics, Optoelectronics and Photonics (APOP 2017) (2017年第二届应用物理、光电子学和光子学国际研讨会)

会议地点: 上海

会议语种:英文

页码: 187-191

在线出版日期: 2017-12-30（万方平台首次上网日期，不代表论文的发表时间）