Fabrication and Electronic Characterization of Epitaxial Gd2O3-doped HfO2 Dielectrics on Si

摘要：

The 5-nm-thick HfO2 film doped with 35 mo1％ Gd2O3 (GDH) as a high k dielectric has been epitaxially grown on Si (100) substrate by pulsed laser deposition (PLD). In situ reflection high-energy electron diffraction (RHEED) evolution of the (lOO)oriented GDH during the deposition has been investigated and shows that a two-dimensional (2D) single crystalline GDH grows with a smooth surface. The in-plane orientation relationship between (100) Si substrate and (100) GDH film adopts a cube on cube

关键词： high k HfO2 Gd2O3 epitaxial growth PLD

作者: Xinqiang Zhang Hailing Tu Xiaona Wang Mengmeng Yang YuhuaXiong Lei Wang Jun Du

作者单位: Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals, Beijing 100088, Peoples Republic of China

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1036-1038

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）