Novel Structure of 4H-SiC Bipolar Junction Transistor

摘要：

A novel structure of 4H-SiC bipolar junction transistor (BJT) with floating buried layer (FBL) in the base epilayer is presented. Numerical simulations are performed to demonstrate that the current gain shows an approximately 100％ increase due to the creation of buried layer electric-field. However, the variation rate of current gain is decreased sharply indicating FBL structure with high current gain stability due to reducing the recombination current of base-emitter depletion region. Furthermore, the charges in the buried layer modulate the electric-field resulting from a higher electric-field peak introduced at the etched edge of base-collector junction, which results in breakdown voltage (BVCEO) enhanced.

作者: Yourun Zhang Bo Zhang Zhaoji Li Xilin liu Xiaochuan Deng

作者单位: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, P.R.China

会议类型: 国际会议

会议名称: 2009国际通信电路与系统学术会议(ICCCAS 2009)(2009 International Conference on Communications，Circuits and Systems)

会议地点: 成都

会议语种:英文

页码: 641-644

在线出版日期: 2009-07-23（万方平台首次上网日期，不代表论文的发表时间）