United Gauss-Pearson-IV distribution model of ions implanted into silicon

摘要：

In this paper a united Gauss-Pearson-IV (UGP) distribution model is presented by definition of a weight factor Rg, which represents the percent rate between the number of channeling ions and the number of all ions implanted for the first time based on determination of some basic relation ships and correction of some basic conclusions of Pearson-IV distribution model. The UGP models fit the experimental results of high energies B ions implantation into crystal Si with and without oxide mask and low energy BF2 implantation into crystal and amorphous Si very well.

关键词： Ion implantation Silicon UGP model Channeling effect Random scattering effect

作者: Haipeng Zhang Mingyu Gao Liyan Xu Mi Lin Xiaoyan Niu Weifeng Lv

作者单位: School of Electronics and Information, Hangzhou Dianzi University, Hangzhou, 310018,China School of Electronics and Information, Hangzhou Dianzi University, Hangzhou,310018, China School of Electronics and Information, Hangzhou Dianzi University, Hangzhou, 310018, China

会议类型: 国际会议

会议名称: The 16th International Conference on Solid State Ionics(第十六届国际固态离子学会议)

会议地点: 上海

会议语种:英文

页码: 832-836

在线出版日期: 2007-07-01（万方平台首次上网日期，不代表论文的发表时间）