Displacement damage dose approach to analyze ion irradiation effects on homemade GaAs/Ge solar cells

摘要：

Displacement damage dose is applied to analyze the irradiation effects of 2 MeV carbon ions and 0.28～20 MeV protons on homemade GaAs/Ge solar cells.The NIEL for each ion is modified by taking into account the distribution of Bragg damage peak in the active region of the solar cells,and then the corresponding displacement damage dose is obtained.It is found that with the aid of displacement damage dose,the degradation of Pmax of GaAs/Ge solar cells induced by carbon ions and protons with various energies and fluences could be characterized with a simple curve.Obviously,the displacement damage dose approach simplifies the description of ion irradiation effects on homemade GaAs/Ge solar cells.

关键词： GaAs/Ge solar cells displacement damage dose carbon ion proton irradiation

作者: LIU Yun-Hong(刘运宏) WANG Rong(王荣) CUI Xin-Yu(崔新宇) SUN Xu-Fang(孙旭芳)

作者单位: Key Laboratory of Beam Technology and Materials Modification of Ministry of Education,Beijing Normal Key Laboratory of Beam Technology and Materials Modification of Ministry of Education,Beijing Normal Tianjin Institute of Power Sources,Tianjin 300381,China

会议类型: 国际会议

会议名称: The 13th National Nuclear Physics Conference of China(第十三届全国核物理大会暨第八届会员代表大会)

会议地点: 兰州

会议语种:英文

页码: 243-246

在线出版日期: 2007-08-22（万方平台首次上网日期，不代表论文的发表时间）