Annealing effects on the photoluminescence of Pb-ion irradiated He-doped Sapphire
In the present work the photoluminescence (PL) character of Single crystal sapphire (Al<,2>O<,3>) samples with and without implantation by 110keV He and/or irradiation by 230-MeV Pb ions, as well as subsequently annealing at 600K, 900K and 1100K temperature (T<,A>) was studied. The modification of structure and optical properties induced by ion irradiation were analyzed by using PL and FTIR spectra. The PL measurements showed that luminescence peaks located at 390, 413, 450, and 564nm appeared in irradiated samples. The luminescence peaks appeared at 360, 380, and 516nm after annealing. Infrared spectra showed a broadening of the absorption band between 460cm<-1> and 510cm<-1> which indicated the formation of strongly damaged regions in the Al<,2>O <,3> samples, and position shift of the absorption band in 1000-1300cm<-1> towards to high wavenumber.
SONG Yin SHENG Yan-bin WANG Zhi-guang XIE Er-qing JIN Yun_fan ZHAN Chong-hong YAO Cun-feng ZANG Hang LIU Chun-bao ZHOU Li-hong
Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China School of Physical S Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China
国际会议
桂林
英文
167-171
2007-10-23（万方平台首次上网日期，不代表论文的发表时间）