Total Dose Radiation Characteristics of High Voltage LDMOS on SIMOX Substrate

摘要：

This paper presents the total dose radiation characteristics of high voltage LDMOS on SIMOX substrate using a total dose radiation-hard 0.8 μm SOI CMOS process. The radiation performance is characterized by transistor threshold voltage shifts, transistor leakage currents. The experimental results show that the breakdown voltage of the LDMOS is 38V, the threshold voltage shifts of front channels are less than 300mV and the back channel threshold voltage are greater than 19V at 1Mrad(Si).

作者: Zhiqiang Xiao Ming Qiao Bo Zhang Jing Xu

作者单位: State key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Scien State key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Scien The 58th Research Institute of China Electronics Technology Group Corporation, Wuxi, 214035, China

会议类型: 国际会议

会议名称: 2007年通信、电路与系统国际会议(2007 International Conference on Communications,Circuits and Systems Proceedings)

会议地点: 日本福冈

会议语种:英文

在线出版日期: 2007-07-11（万方平台首次上网日期，不代表论文的发表时间）