Simulation and Optimization of High Performance On-Chip Solenoid MEMS Inductor
In this paper,we proposed a vertical spiral structure to realize high performance(high Q and high L)onchip inductor based on MEMS technology.It aims to reduce the substrate loss by the approach of 3D vertical integration so that the quality factor of the on-chip inductors could be improved.In order to verify and explore the improvement of the quality factor of the vertical spiral solenoid structure,finite element method was used to analysis the performance of designed inductor,and an optimal solution was raised through modeling and simulation by commercial software HFSS.Combining the thermal oxidation process level,we tried to isolate silicon by 10um silicon dioxide isolation layer.Simulation results show that more than 10um silicon dioxide isolation layer no longer improves the inductive performance.The simulation results show that the same scalar-isolated vertical spiral inductors provide superior performance(peak Q = 32 @ 7 GHz,L=4nH).Compared with ordinary silicon planar inductors,the quality factor Q increased 30%,inductance L increased 100%.In addition,self-resonant frequency is greater than 10 GHz which makes our inductor could adapt to a wider spectrum of applications.
MEMS process On-chip inductor High-Q Solenoid structure MEMS RF inductor
Shengrui Zhou Ling Xu Jicun Lu Yinglin Yang
School of Microelectronics Fudan University Shanghai 200433,China
国际会议
上海
英文
710-715
2018-08-08（万方平台首次上网日期，不代表论文的发表时间）