Application of Multi-step Diffusion Process for Large Thickness Structural Layer Fabrication

摘要：

　　A novel method,multi-step diffusion,has been put forth in this paper,which divides conventional diffusion process into two relatively short periods remaining cumulative duration of diffusion the same.The two periods are performed continuously and each diffusion period includes one predeposition and drive-in respectively.Comparing with conventional two-step diffusion method,multi-step diffusion could bring silicon substrate larger amount of boron dopants and possesses the potential to trap dopants in a certain depth,so that it is possible to obtain larger effective junction depth (boron concentration≥5×1019/cm3).The verification experiment shows the same result.In the experiment,21 μm thick heavily boron-doped layer is obtained through the novel method,while the layer thickness mentioned in references is less than 15 μm using conventional two-step method under the same diffusion condition.

关键词： multi-step diffusion heavily boron doping structural layer fabrication

作者: Haoer Zhang Wei Cheng Wenjia Zuo Yuanzhe Su Yipan Li Jie He Lingyun Wang Daoheng Sun

作者单位: Department of Mechanical and Electrical Engineering, Xiamen University, Xiamen, Fujian, China

会议类型: 国际会议

会议名称: 中国微米纳米技术学会第14届学术年会、第3届国际年会暨第6届微米纳米技术“创新与产业化国际研讨与展览会(CSMNT2012 & ICMAN2012)

会议地点: 杭州

会议语种:英文

页码: 1-5

在线出版日期: 2012-11-04（万方平台首次上网日期，不代表论文的发表时间）