Charge Storage Characteristics of Ni-NiOx core-shell Nanocrystals embedded in SiO2 gate oxide

摘要：

　　The memory characteristics of Ni-NiOx core-shell nanocrystals (NCs) in the metal-oxide-semiconductor (MOS) capacitor structure were investigated.Scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM) confirm the formation of the spherically shaped,well isolated,and uniformly distributed Ni NCs surrounded by NiOx (~1nm) in SiO2 gate oxide.The Ni-NiOx NCs embedded in SiO2 exhibited a large memory window of 9.8 V as well as efficient programming/erasing speed and improved retention characteristics of about 10 years.A possible band model needed for injection efficiency of carriers was given by considering the electron/hole barrier width and the additional interface states through the NiOx shell layer.

关键词： NC Nonvolatile memory Ni-NiOx core-shell NCs Retention characterisitics P/E speed

作者: Ni Henan Wu Liangcai Hui Chun Tan Yongsheng Chen Zitong

作者单位: Department of Physics, Shaoxing University, Shaoxing, Zhejiang, 312000, China;Research Institute of Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, Research Institute of Micro/Nano Science and Technology, Shanghai JiaotongUniversity, Shanghai 20003 Department of Physics, Shaoxing University, Shaoxing, Zhejiang, 312000, China

会议类型: 国际会议

会议名称: 中国微米纳米技术学会第14届学术年会、第3届国际年会暨第6届微米纳米技术“创新与产业化国际研讨与展览会(CSMNT2012 & ICMAN2012)

会议地点: 杭州

会议语种:英文

页码: 1-7

在线出版日期: 2012-11-04（万方平台首次上网日期，不代表论文的发表时间）