Thermal Stress and Deformation Depend on Thickness of CCD Composite Dielectrics

摘要：

　　Thermal stress and deformation depended on CCD Si3N4/SiO2/Si composite dielectrics thickness was simulated by ANSYS.The simulation results were indicated that the thermal stress of each dielectric film was constant and did not depend on the dielectrics thickness,and the deformation distribution was ring from vertical view,and the extremal deformation was located in the structure center whatever composite dielectrics thickness was,and the deformation approximately linearly increased with the dielectrics thickness,and the Si3N4 effect on the deformation was greater than SiO2.The effect was also analysed in the experiment.How to select appropriate dielectrics thickness was discussed from the thermal stress and deformation effects on CCD composite dielectrics structure performances and follow-up technology process.

关键词： composite dielectrics thermal stress deformation thickness

作者: Xiaoming Zheng Limei Rong Tao Xie Yong Zhou Jiangfeng Du Xiaowen Zhang Zuwen Wang

作者单位: School of Microelectronics and Solid-State Electronic University of Electronic Science and Technolog China Defense Science and Technology Information Center Beijing, China

会议类型: 国际会议

会议名称: 2012 International Conference on Quality, Reliability, Risk, Maintenance, and Safety Engineering & The 3rd International Conference on Maintenance Engineering (2012质量,可靠性,风险,维修性及安全性工程国际会议(QR2MSE 2012 & ICME 2012))

会议地点: 成都

会议语种:英文

页码: 942-944

在线出版日期: 2012-06-15（万方平台首次上网日期，不代表论文的发表时间）