Study on Simulation Method of Thermal Stress and Deformation in CCD Composite Dielectrics
Focused on the CCD composite dielectrics (Si3N4/SiO2),the method of the thermal-mechanical coupling simulation was studied by three different ANSYS models including the whole model,the 1/4 model and the 2-D model in this paper.The thermal stress and deformation were calculated,and the reasonableness of the simulation method was validated,and the differences of these three models simulation results were also discussed.Based on analyzing the advantages and disadvantages of these three models,the adaptability conditions of three models were discussed.This study is useful to investigate the simulation method of thermal stress and deformation in the multi-layer film,especially whose thickness is much thinner than its other dimensions.
simulation method composite dielectrics thermal stresss thermal deformation ANSYS
Tao Xie Limei Rong Xiaoming Zheng Zuwen Wang Jiangfeng Du Xiaowen Zhang
School of Microelectronics and Solid-State Electronic University of Electronic Science and Technolog China Defense Science and Technology Information Center,Beijing, China
国际会议
成都
英文
978-980
2012-06-15（万方平台首次上网日期，不代表论文的发表时间）