Capacitive properties and structure of RuO2-HfO2 films prepared by thermal decomposition method
Binary RuO2-HfO2 films on Ti substrates were prepared by a thermal decomposition method. Cyclic voltammetric and charge/discharge properties of the RuO2-HfO2 electrodes were characterized. It was determined that the incorporation of HfO2 into RuO2 greatly improved the capacitive properties of the material. The RuO2-HfO2 electrodes showed excellent cyclic stability, with no decay in charge capability during 1000 CV cycles in acidic solution. A nominal content of 50 mol％ RuO2 and 50 mol％ HfO2 gave the highest specific capacitance of 789.3 F/g (RuO2). The excellent capacitive properties and stability were related to the hydrous amorphous mixed-oxides formed in the film. This work proves that high capacitive performance of RuO2-based electrode materials can be obtained by thermal decomposition, even with the retained chloride in the film.
RuO2-HfO2 films supercapacitor thermal decomposition method
Junqiu Zhu Xin Wang Junmei Sun Zhongzhi Tang Dian Tang
College of Materials Science and Engineering, Fuzhou University, Fuzhou, Fujian, 350108, China Institute for Materials Research, Fuzhou University, Fuzhou, Fujian, 350108, China
国际会议
北京
英文
948-951
2012-10-23（万方平台首次上网日期，不代表论文的发表时间）