The Characterization of Sputtered Zr-Ge-N Thin Films as Diffusion Barriers Between Copper and Silicon
The main purpose of the present micro-structural analysis by transmission electron microscopy (TEM) and X-ray diffraction (XRD) was to investigate whether amorphous Zr-Ge-N films are a potential candidate as a diffusion barrier for Cu wiring used in Si devices. The Zr-Ge-N films were prepared by a radio frequency (RF) reactive magnetron sputterdeposition technique using N2 and Ar mixed gas, and the film structure was found to be sensitive to the gas flow ratio of N2 vs. Ar during sputtering. Polycrystalline Zr-Ge-N films were obtained when the N2/(Ar+N2) ratio was smaller than 0.2 and amorphouslike Zr-Ge-N films were obtained when the ratio was larger than 0.3. Diffusion barrier test was performed by annealing the Cu/Zr-Ge-N/Si film stack under Ar atmosphere. The deposited Zr-Ge-N(C) films remained amorphous even after high temperature annealing. The Cu diffusion profile in the film was assessed by the Auger electron spectroscopy (AES). The results indicate that Cu diffusion was minimal in amorphous Zr-Ge-N(C) films even at high annealing temperatures of 800°C.
Zr-Ge-N films diffusion barrier micro-structural thermal stability
J J Yang B Liu X D Liao G H Jiao K W Xu
Key Laboratory of Radiation Physics and Technology of Ministry of Education, Institute of Nuclear Sc State Key Laboratory of Transient Optics and Photonics, Xian Institute of Optics and Precision Mech State-Key Laboratory for Mechanical Behavior of Materials, Xian Jiaotong University, Xian 710049,
国际会议
西安
英文
120-123
2011-05-11（万方平台首次上网日期，不代表论文的发表时间）