Synthesis and characterization of SiC/SiO2 nanowires grown on Si (100) substrate
Large scale SiC/SiO2 nanowires have been synthesized on Si (100) by the reaction of methane with silica using iron as catalyst. The growth time was 10 mins and the growth temperature was around 1,250℃ in a normal atmospheric pressure. Detailed investigation with scanning electron microscopy (SEM), energy-dispersed X-ray (EDX), X-ray diffraction (XRD) and transmission electron microscopy (TEM) confirm that the SiC/SiO2 nanowires consist of a uniform cubic -SiC core and an amorphous silica shell. The SiC/SiO2 nanowires have a diameter about 30~50 nm and length about 10 μm. Analysis of SEM and TEM results indicated that the nanowires have a large growth rate than that reported. The large growth rate may owe to two reasons: One may be attributed to plentiful carbon atoms (Methane as the carbon resource can be completely decomposed at a temperature 1250℃) and the other may be the hydrogen gas supplied at the growth process.
H.Jiang H.Song L.Z.Cao Z.M.Li D.B.Li G.Q.Miao X.J.Sun Y.R.Chen
Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, P R China..
国际会议
2010 8th International Vacuum Electron Sources Conference and NANOcarbon(第八届真空电子源和纳米碳国际会议)
南京
英文
380
2010-10-14（万方平台首次上网日期，不代表论文的发表时间）