SIMULATION OF CCD DEGRADATION INDUCED BY PROTONS IRRADIATION

摘要：

The mechanisms of charge coupled devices (CCD) irradiated by protons are analyzed. The simulation models of ionization damage and displacement damage are developed. The charge transfer efficiency (CTE) decreased by proton irradiation is numerically simulated. The CTE degradation caused by different traps and by protons with different energies has been studied respectively. Both surface dark signals induced by proton ionization damage and bulk dark signals induced by proton displacement damage are numerically simulated. The variability of surface dark signals, bulk dark signals, and total dark signals with proton fluence is compared. The simulation results are in agreement with the experimental results of the relevant literatures.

作者: Wang Zujun Huang Shaoyan Liu Minbo Tang Benqi Xiao Zhigang Zhang Yong

作者单位: Department of Engineering Physics Key Laboratory of Particle and Radiation Imaging of Ministry of Ed Northwest Institute of Nuclear Technology Xian,710024,CHN

会议类型: 国际会议

会议名称: 18th International Conference on Nuclear Engineering(第18届国际核能工程大会 ICONE 18)

会议地点: 西安

会议语种:英文

页码: 1-5

在线出版日期: 2010-05-17（万方平台首次上网日期，不代表论文的发表时间）