Study of compensation defects and electron irradiation-induced defects in undoped SI-InP by positron lifetime spectroscopy
Positron annihilation lifetime (PAL) spectroscopy，photo-induced current transient spectroscopy (PICTS) and thermally stimulated current (TSC) have been employed to study the formation of compensation defects and their evolvement under iron phosphide (IP) ambience or pure phosphide (PP) ambience. In the formation of IP SI-InP, the diffusion of Fe atoms suppresses the formation of some open-volume defects. As to PP SI-InP, VInH4 complexes dissociate into acceptor vacancies VInHn (n-3)(n=0,1,2,3), which compensate residual donor type defects and make the sample semi-insulating. Electron irradiation-induced deep level defects have been studied by TSC in PP and IP SI-InP, respectively. In contrast to a high concentration of irradiation-induced defects in as-grown and PP annealed InP, IP SI-InP has a very low concentration of defects.
Indium phosphide Defect Semi-insulating Irradiation
Y.J.Zhang A.H.Deng Y.W.Zhao J.Yu X.X.Yu X.Cheng Y.L.Zhou J.J.Long
Department of Applied Physics,Sichuan University,Chengdu 610065,P.R.China Institute of Semiconductor,Chinese Academy of Sciences,P.O.Box 912,Beijing 100083,P.R.China
国际会议
第九届国际正电子与正电子素国际会议(9th International Workshop on Positron and Positronium Chemistry)(PPC–9)
武汉
英文
134-136
2008-05-11（万方平台首次上网日期，不代表论文的发表时间）